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A connectorized RF MEMS tunable two-pole band-pass filter is demonstrated as the first all-silicon evanescent mode cavity filter operating in the K-Ka band. All filter components are fabricated with cost-effective silicon micromachining techniques. The filter's poles are controlled by two micro-corrugated MEMS diaphragms that are engineered to be independently controlled with voltages below 140 V...
A new Padé behavioral model dependent on the magnitude of the load reflection coefficient is presented. With this model, we need only sweep the magnitude of reflection coefficient, |ΓL|, to cover the whole Smith chart, instead of sweeping both phase and magnitude when performing model extraction. This greatly simplifies the model extraction process from a 2D-load-pull sweep to a 1D sweep. Both simulation...
In this letter, a quad-mode single band bandpass filter and a dual-mode dualband bandpass filter are designed and fabricated by the same structure (two coupled dual-mode loop resonators), which consist of an outer loop resonator with square-patch perturbation at the corner and a inner loop resonator with corner-cut perturbation at the corner. Four transmission zeros are realized in the stopbands to...
This paper presents a quad-band filter using a set of stub-loaded quarter-wavelength resonators operated at the first and fourth passbands (1.8/5.8 GHz) and a set of stub-loaded half-wavelength SIRs operated at the second and third passbands (2.4/3.5 GHz). Furthermore, both of the loading stub are used to generate another passband. This study provides an effective method to design a quad-band filter...
The root cause of the instability is quantitatively identified for an explicit FDTD-based analysis of general lossy problems where both dielectrics and conductors can be lossy and inhomogeneous. Based on the root cause analysis, an efficient algorithm is developed to achieve unconditional stability in an explicit FDTD-based solution of general lossy problems. Numerical experiments have demonstrated...
This paper presents a W-band LNA implemented in a 90 nm SiGe BiCMOS technology. The LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater than 25 dB gain and less than 4.5 dB NF over the full W-band. Input and output return losses are greater than 10 dB from 78–149 GHz. The circuit nominally operates from a 1.2 V supply while consuming 15.6 mW of DC power. Due to the...
A power-harvesting prototype made of a compact antenna and an optimized RF-DC converter circuit is designed to convert the wireless signal given by a 2-way radio into usable DC power at which many low power electronics and displays used in sensors and smart meters can operate. Measurements show electronics up to 13V can be easily powered by holding the harvester 5 inches away from the radio. A capacitive...
This paper presents a design method for resonator-type bandpass SAW filters that results in significantly larger bandwidth than what is currently possible with traditional SAW filter synthesis approaches. Unlike traditional lattice/ladder-type SAW filters, this method employs SAW resonators of a single resonant frequency and therefore reduces the complexity of SAW filter design. The proposed coupling-matrix-based...
This paper addresses the design and measurement results of two high frequency signal sources implemented in SiGe HBT technology. The 367 GHz signal source achieves a phase noise of −110 dBc/Hz at 10 MHz offset from the carrier and provides better than −8 dBm of output power. The 154 GHz signal source achieves a phase noise of −87 dBc/Hz at 1 MHz offset from the carrier and generates +7 dBm of differential...
This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used....
This paper presents, for the first time, a tunable microstrip microfluidic bandpass filter, with a center frequency of 1 GHz, on liquid crystal polymer (LCP). A 60 mil cavity, initially filled with distilled (DI) water (εr = 80), is placed below a 2 mil LCP layer. Based on this multilayer structure, the dimensions of microstrip lines are determined. In order to tune the filter center frequency, DI...
To combine large number of CMOS power transistors within compact area, a 2D distributed in-phase power combiner is proposed with use of metamaterial-based zero-phase-shifter. One 54 to 62.8GHz PA has been demonstrated in 65nm CMOS with a 4×4 distributed power combining of 16 transistors in compact area of 0.48mm2. Measured results show 16.6dBm output power (OP1dB), 11.3% peak PAE, 95.2mW/mm2 output...
The last seven years, Cinvestav-GDL and CICESE, two of the most important research centers in Mexico, have been working together in several microwave research topics. This paper describes the relationship of these two academic institutions regarding to the research activities in this field. A brief history and the research interests of these institutions are presented, highlighting some of the benefits...
A 60-GHz 1.2 V power amplifier (PA) using fully symmetrical 8-way transformer power combiner is designed in 90 nm CMOS. The fully symmetrical transformer power combiner structure mitigates the impedance imbalance caused by uneven voltage coupling between primaries and secondary. At 60 GHz, impedance uniformity between four input ports of the transformer power combiner is better than 5% in real part...
This paper presents a microfluidic cooling solution for passive and active devices on liquid crystal polymer (LCP). Distilled (DI) water circulates inside a 15 mil micromachined channel and takes away the dissipated heat from passive and active heat sources. A micropump is used to provide enough pressure to inject the fluid and to ensure its circulation. A 20 W surface mount resistor is cooled with...
A novel sharp-rejection bandstop filter (BSF) based on signal interference technique integrating with conventional open stubs is proposed in this letter. The two paths are constructed by embedding a U-shaped short-circuited stepped-impedance resonator (SIR) structure in the traditional BSF with open stubs. The impedance ratio of the SIR can be tuned to control the bandwidth of the BSF. The ripple...
A 6-bit programmable gain amplifier (PGA) with current mode exponential gain control is presented in this paper that achieves a linearity error within ±0.1 dB over a 30-dB wide gain control range. The proposed design topology has two digitally-variable gain amplifiers and a post amplifier that are interconnected by a differential pair wideband matching network to provide an enhanced gain bandwidth...
This paper presents the first fully on-chip integrated energy harvester and rectenna at the W-Band in 65nm CMOS technology. The designs are based on a 1-stage Dickson voltage multiplier. The rectenna consists of an on-chip integrated dipole antenna with a reflector underneath the substrate to enhance the directivity and realized gain. The energy harvester and rectenna achieve a power conversion efficiency...
In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and implemented. First, a CPW on Duroid to W-band aluminum waveguide is realized with a bandwidth of 49 % (67–110 GHz), an average insertion loss of −0.35 dB and reflection loss below −10 dB throughout the entire band. Then, wire-bonding the CMOS G-S-G pads to the Duroid CPW introduces an average 0.2 dB loss...
This paper presents the surface-wave leakage from a substrate integrated waveguide (SIW) on a grounded dielectric substrate, which propagates the TM0 mode at the lowest order. The hybrid generalized scattering matrix (GSM) formulation, describing the electromagnetric field inside the rectangular waveguide walls, combined with the finite-element method(FEM), accurately depicting the fields surrounding...
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